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These articles may be downloaded for personal use only. Any other use requires prior permission of the author and the corresponding publisher.

05/21/12
'Dopant gives graphene solar cells highest efficiency yet'
Our work on highest solar cell efficiency using graphene has been featured in popular internet media [LINK HERE]

05/03/2012




Our recent work reporting highest graphene solar cell efficienty yet has been published in Nano Letters  [LINK HERE]


04/01/2012




Our work has been featured by the internet media such as Science Daily, PhysOrg, Techtrend24, eScienceNews, AIP's Highlights,
"Writing Graphene Circuitry with "ion" pens "
 [LINK HERE]


04/01/2012




Our article "Drawing Graphene Nanoribbons on SiC" has become APL's #3 most downloaded article for the month of March 2012 [LINK HERE]


03/01/2012




Our article "Drawing Graphene Nanoribbons on SiC" has become APL's #1 most downloaded article for the month of February 2012 [LINK HERE]




02/27/2012




"Drawing Graphene Nanoribbons on SiC via Ion Implantation" has been selected for the February 27, 2012 issue of Virtual Journal of Nanoscale Science & Technology.  The Virtual Journal is published by the American Institute of Physics and the American Physical Society in cooperation with numerous other societies and publisher  [LINK HERE]



02/13/2012





Our article made to the APL's February 13th issue cover and research highlight
[LINK HERE]!



02/12/2012




Our Work "Drawing Graphene Nanoribbons on SiC by Ion Implantation" has been published in Applied Physics Letters. In this work, we have shown large area graphene nanoribbon growth on SiC substrates.
Reported results are expected to be significant in graphene circuitry formation.[LINK HERE] 


01/31/2012
Our work has featured in editorial announcement by APS.

'Editorial current graphene research- Going beyond the pure monolayer graphene' can be found here. 
 [LINK HERE]

01/17/2012

Our article has been published and featured by American Physical Society's Physical Review X!


"Diodes based on metal-semiconductor interfaces are common place in semiconductor electronics. What happens when the normal metal is replaced by monolayer graphene? A group of physicists at University of Florida experimentally demonstrate that graphene-semiconductor interfaces make interesting diodes for a surprisingly wide variety of semiconductors"

                                                  

[READ THE POPULAR SUMMARY AND THE ARTICLE HERE]

 


01/15/2012

Our article has been published in Elsevier's Carbon!


Our article 'Extinction of Ferromagnetism in Highly Oriented Pyrolytic Graphite by Annealing' has been accepted for publication in Carbon.  In this article, we have pushed multi-graphene-layers from ferromagnetic to diamagnetic limit by high temperature treatment. [PDF HERE]


11/15/2011

Our article on graphene based diodes made on various semiconductors has been accepted for publication in Physical Review X


Our recent article 'Rectification at Graphene-semiconductor Interfaces: Zero-gap Semiconductor Based Diodes' has been accepted in new born Physics Review X's first issue! In this article, we have experimentally demostrated graphene based diodes made on Si, GaAs, GaN, and SiC. Graphene based diodes are expected to be used in high frequency, high power devices.
[READ THE POPULAR SUMMARY AND THE ARTICLE HERE]



10/17/2011

Our art piece made to AVS Art Zone Finalist
!

Our art & science piece named 'Carbon Fingerprint' has made it to last round and will be displayed at the AVS Art Zone exhibit Hallfrom Nov1st till Nov3rd, 2011. [LINK HERE]



10/10/2011

Applied Physics Letters Top 20 Download in September, 2011


Our article  'Graphene/GaN Schottky Diodes: Stability at Elevated Temperatures', which was published in Applied Physics Letters. [PDF HERE] in September,2011, went on to become APL's top 20 downloaded list [LINK HERE].



09/26/2011

Our Patent Titled 'Graphene / Graphite based semiconducting devices' has been published.


Our patent application is published under the Patent Cooperation Treaty with patent #WO 2011/115891A2. In this patent, we have integrated various type of carbon allotropes into the devices beyond conventional Silicon geometries (MOSFETs).[LINK HERE][2nd LINK HERE]

09/16/2011

Highlights by The virtual Journal of
American Institute of Physics and the American Physical Society

Our article titled 'Graphene/GaN Schottky Diodes: Stability at Elevated Temperatures.' (originally published in
Applied Physics Letters. [PDF HERE]  has been highlighted / published Virtual Journal of Nanoscale Science and Technology. The Virtual Journal, which is published by the American Institute of Physics and the American Physical Society in cooperation with numerous other societies and publishers, is an edited compilation of links to articles from participating publishers, covering a focused area of frontier research.

09/05/2011
Our article has been published in journal, Nanotechnology.

Our recent article on stable chemical doping of graphene for lower resistance and high transparency has been published in  Nanotechnology magazine. In this article, we have modified graphene sheets to use in LCD displays and various touch screen applications.[PDF HERE]



08/26/2011

Patent Application has been filed.


Our latest patent on 'Selective Graphene Growth Using Ion-beam Lithography' has been filed. Related manuscripts will be submitted soon .



07/25/2011

Our article has  been selected as Editor's suggestion by American Physical Society.

Our recent article on seeking ultrapure graphene in doped graphite has been picked as a editor's suggestion by American Physical Society publications.  (Phys. Rev. B Rapid Comm.[PDF HERE]

04/05/2011

Publication in Journal of Applied Physics.


Our article on growth of ferroelectric and ferromagnetic BiMnO3 thin films has been published in Journal of Applied Physics.[PDF HERE]

02/26/2011

Our work is published Carbon magazine.


Our article on modulating electrical properties of graphene / MLG diode by doping has been published in Carbon magazine. This is article, we have shown that successful graphene diodes can be fabricated and their electrical properties / characteristics can be engineering as desired via chemical doping.[PDF HERE]